GlobalFoundries Moves RF GaN to Volume, Cuts RF Die Area 45%
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Burlington – October 24, 2026 -- GlobalFoundries (GF) has qualified RFGaN1, its first RF GaN-on-silicon technology for volume production on 200mm wafers. It has also qualified SLATE, a wafer-bonding technology that cuts RF die area by up to 45% with no loss in RF performance.
RFGaN1 runs at 12 to 28V across 1 to 15 GHz
The platform uses depletion-mode devices and targets sustained high output power and efficiency in satellite communications, cellular infrastructure and defense. Dan Denninghoff, Senior Director of RF GaN Product Line, said GaN has so far been a niche, high-budget option. GF argues that 200mm silicon manufacturing gives customers the cost structure and volume to build a supply chain around it instead of treating each design as a one-off.